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  sep-01-2003 1 BFS466L6 1 2 3 4 5 6 npn silicon rf twin transistor preliminary data ? low voltage/ low current applications ? ideal for vco modules and low noise amplifiers ? low noise figure: tr1: 1.1db at 1.8 ghz tr2: 1.0 db at 1.8 ghz ? world's smallest smd 6-pin leadless package ? built in 2 transitors (tr1: die as bfr460l3, tr2: die as bfr360l3)             esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package BFS466L6 ac 1=c1 2=e1 3=c2 4=b2 5=e2 6=b1 tslp-6-1 maximum ratings parameter symbol value unit collector-emitter voltage tr1 tr2 v ceo 4.5 6 v collector-emitter voltage tr1 tr2 v ces 15 15 collector-base voltage tr1 tr2 v cbo 15 15 emitter-base voltage tr1 tr2 v ebo 1.5 2 collector current tr1 tr2 i c 50 35 ma
sep-01-2003 2 BFS466L6 maximum ratings parameter symbol value unit base current tr1 tr2 i b 5 4 ma total power dissipation 1) tr1, t s 104c tr2, t s 102c p tot 200 210 mw junction temperature tr1 tr2 t j 150 150 c ambient temperature tr1 tr2 t a -65 ... 150 -65 ... 150 storage temperature tr1 tr2 t stg -65 ... 150 -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) tr1 tr2 r thjs 230 230 k/w 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance
sep-01-2003 3 BFS466L6 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage tr1, i c = 1 ma, i b = 0 tr2, i c = 1 ma, i b = 0 v (br)ceo 4.5 6 5 9 - - v collector-emitter cutoff current tr1, v ce = 15 v, v be = 0 tr2, v ce = 15 v, v be = 0 i ces - - - - 10 10 a collector-base cutoff current tr1, v cb = 5 v, i e = 0 tr2, v cb = 5 v, i e = 0 i cbo - - - - 100 100 na emitter-base cutoff current tr1, v eb = 0,5 v, i c = 0 tr2, v eb = 1 v, i c = 0 i ebo - - - - 1 1 a dc current gain tr1, i c = 20 ma, v ce = 3 v tr2, i c = 20 ma, v ce = 3 v h fe - 90 130 130 - 160 - electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency tr1, i c = 30 ma, v ce = 3 v, f = 1 ghz tr2, i c = 15 ma, v ce = 3 v, f = 1 ghz f t 16 11 22 14 - - ghz collector-base capacitance tr1, v cb = 3 v, f = 1 mhz, emitter grounded tr2, v cb = 5 v, f = 1 mhz, emitter grounded c cb - - 0.33 0.3 0.5 0.45 pf collector emitter capacitance tr1, v ce = 3 v, f = 1 mhz, base grounded tr1, v ce = 3 v, f = 1 mhz, base grounded c ce - - 0.17 0.17 - - emitter-base capacitance tr1, v eb = 0,5 v, f = 1 mhz, collector grounded tr2, v eb = 0,5 v, f = 1 mhz, collector grounded c eb - - 0.57 0.48 - -
sep-01-2003 4 BFS466L6 electrical characteristics at ta = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) noise figure tr1, i c =5ma, v ce = 3 v, f = 1.8 ghz, z s = z sopt tr1, i c =5ma, v ce = 3 v, f = 3 ghz, z s = z sopt tr2, i c =3ma, v ce = 3 v, f = 1.8 ghz, z s = z sopt tr2, i c =3ma, v ce = 3 v, f = 3 ghz, z s = z sopt f - - - - 1.1 1.4 1 1.4 - - - - db power gain, maximum available 1) tr1, i c = 20 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz tr1, i c = 20 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 3 ghz tr2, i c = 15 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz tr2, i c = 15 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 3 ghz g ma - - - - 14.5 10 14.5 10 - - - - transducer gain tr1, i c = 20 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8ghz tr1, i c = 20 ma, v ce = 3 v, z s = z l = 50 ? , f = 3ghz tr2, i c = 15 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8ghz tr2, i c = 15 ma, v ce = 3 v, z s = z l = 50 ? , f = 3ghz | s 21e | 2 - - - - 12.5 9 12.5 8.5 - - - - third order intercept point at output 2) tr1, v ce =3v, i c =20ma, z s = z l =50 ?, f =1.8ghz tr2, v ce =3v, i c =15ma, z s = z l =50 ?, f =1.8ghz ip 3 - - 28 24.5 - - dbm 1db compression point, at output tr1, i c =20ma, v ce =3v, z s = z l =50 ?, f =1.8ghz tr1, i c =15ma, v ce =3v, z s = z l =50 ?, f =1.8ghz p -1db - - 12 9 - - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ) 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen ? infineon technologies ag 200 4 . all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office (www.infineon.com). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.


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